Welcome to the official website for the Establish Silicon Carbide Applications for Power Electronics in Europe (ESCAPEE) project. This three-year, EU-funded, research programme brings together four academic and five industrial partners from France, Spain, Sweden and the United Kingdom.

Silicon Carbide (SiC) is a wide-band-gap semiconductor material that has the potential to revolutionise the power electronics industry. SiC devices offer higher power densities and lower enegy losses, enabling lighter, more compact and higher efficiency products for applications ranging from rail transport to wind power.

ESCAPEE is specifically focussing on the development of 3.5 kV Silicon Carbide metal oxide silicon field effect transistors (MOSFETS) and Schottky barrier diodes (SBD). These devices will form the building blocks for the next generation of power electronic systems.


  • 14 Jun 2005
    Cree announces SiC MESFET for WiMax applications: Cree is now sampling a 10W SiC MESFET specifically designed for broadband wireless access and WiMax applications.
  • 09 Jun 2005
    Cree awarded $12M US Navy contract: Cree has been awarded a $12M contract by the Office of Naval Research (ONR) to develop 10kV SiC devices and power modules for the next generation of US Navy vessels.
  • 26 Aug 2004
    Toyota develops defect free SiC crystals: Writing in the journal Nature, a team from Toyota Central R&D Labs has reported an innovative technique to grow "virtually dislocation free" ultra-high quality SiC single crystals.
  • 27 Jul 2004
    Cree Reports Record Revenue: Cree's total revenue for the financial year ending 27 June 2004 was $307M, a 34% increase on 2003. SiC power devices represented "less than 1%" of sales, with the majority of revenue coming from LED products.
  • 26 Feb 2004
    APT announces SiC Schottky Diodes: APT has launched a range of hermetic and plastic SiC Schottky diodes, using die supplied by Cree.
  • 29 Jan 2004
    Cree Expands Schottky Diode Product Family: Cree has added 10A and 20A devices to its 1200V SiC Schottky diode range. The company has also introduced 10A and 20A 300V diodes.