WP2 Thick Epitaxial Growth
Work Package Leader: Linkoping University
- Sublimation epitaxy process for growth of low-doped (1E15 atoms/cm³) high-quality SiC layers up to 40um thick (Linkoping University).
- World-leading MOS-channel mobility values (>100 cm²/Vs) demonstrated using sublimation epitaxy material (Linkoping University).